Whereas Samsung has commenced the mass manufacturing of its next-generation 5 nm chip, the corporate can also be working laborious to enhance on the present 7nm course of. The Korean tech big has introduced that it has attained success in making use of 3D stacking expertise on excessive ultraviolet (EUV)-based 7 nanometers (nm) chips.

Samsung calls the expertise eXtended-Dice, or X-Dice and it entails stacking the SRAM on prime of the logic die. That is finished utilizing Samsung’s via silicon by way of (TSV) expertise that makes use of tiny holes to interconnect layers on chips.

This course of is markedly totally different from the one used on Standard system semiconductors which have the logic dies resembling CPU and GPU on the identical airplane because the SRAM. Within the case of the X-Dice, it stacks the SRAM on prime of the logic dies which occupies much less house and helps in extra environment friendly energy saving. Samsung additionally disclosed that the brand new course of will result in a lift in the information switch pace.

The South Korean tech big assured that it’ll proceed to push the boundary in phrases of the event of recent expertise for the development of semiconductor expertise. We don’t have an concept of the place Samsung would first implement this chipset however there are speculations that the Galaxy S1 might utilise an improved model of the Exynos 990 whereas the Galaxy S21 Extremely can have a 5nm Exynos 1000 and that might be it.

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